Sanyo Electric 2SC4217
The 2SC4217 is classified by 10mA hFE as follows : 40 C 80 60 D 120 100 E 200 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.| Part No. | 2SC4217 |
|---|---|
| Datasheet | 2SC4217 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage (VCEO≥300V).● Micaless package facilitating easy mounting. Package Dimensions unit:mm 2042A [2SC4217] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta=25˚C Tc=25˚C B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings 300 300 6 200 400 1.5 10 150 –55 to +150 Unit V V V mA mA W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=200V, IE=0 VEB=5V, IC=0 VCE=10V, IC=10mA VCE=10V, IC=10mA VCB=50V, f=1MHz IC=20mA, IB=2mA IC=20mA, IB=2mA 40* 70 3.5 0.6 1.0...
