Sanyo Electric 2SC4293
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
● High speed (tf=300ns max).● High breakdown voltage (VCBO=1500V).
● High reliability (adoption of HVP process).
● Adoption of MBIT process.
● On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4293] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.8 2.0 1.0 123 5.45 5.45 Conditions 3.5 20.4 2.0 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Ratings 1500 800 7 5 16 3.0 50 150 –55 to +150 Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO...