Sanyo Electric 2SC4446
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.● High VEBO. Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 ( ) : 2SA1687 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)40V, IE=0 Emitter Cutoff Current IEBO VEB=(–)10V, IC=0 DC Current Gain hFE VCE=(–)6V, IC=(–)1mA Gain-Bandwidth Product fT VCE=(–)6V, IC=(–)1mA * : The 2SA1687/2SC4446 are classified by 1mA hFE as follows : Marking : D (2SA1687) Rank hFE 567 135 to 270 200 to 400 300 to 600 H (2SC4446) hFE rank : 5, 6, 7...