Sanyo Electric 2SC4450
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
● High breakdown voltage.● Small Cob.
● Wide ASO.
● High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4450] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=1500V, IE=0 VEB=4V, IC=0 VCE=5V, IC=200µA...