Sanyo Electric 2SC4480
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
FEATURES
● Large current capacity.● Adoption of MBIT process.
● High DC current gain.
● Low collector-to-emitter saturation voltage.
● High VEBO. Package Dimensions unit:mm 2064A [2SC4480] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.54 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=50mA VCB=10V, f=1MHz 1.0 0.6 0.5 23 2.54 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings 30 25 15 2 4 0.4 1 150 –55 to +150 Unit V V V A A A W ˚C ˚C Rati...