Sanyo Electric 2SC4488
NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Adoption of FBET, MBIT processes.● High breakdown voltage, large current capacity.
● Fast switching speed. 1.45 6.9 1.0 Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.54 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings (–)120 (–)100 (–)6 (–)1 (–)2 1 150 –55 to +150 4.0 1.0 Unit V V V A A W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA 100* 120 Conditions Ratings min typ max (–)100 (–)100 400* MHz Unit nA nA * : The 2SA1708/2SC4488 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 Continued on next page.