Sanyo Electric 2SC4563
PNP Epitaxial Planar Silicon Transistor
| Part No. | 2SC4563 |
|---|---|
| Datasheet | 2SC4563 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High fT : fT=1.2GHz typ.● High breakdown voltage : VCEO≥80V.
● High current : IC=500mA.
● Small reverse transfer capacitance : Cre=3.8pF (VCB=30V).
● Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=80V, IE=0 VEB=2V, IC=0 VCE=10V, IC=50mA VCE=10V, IC=500mA VCE=10V, IC=100mA IC=300mA, IB=30mA IC=300mA, IB=30mA 2...
