Sanyo Electric 2SC4630LS
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2079D [2SC4630LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=2.8pF). Full isolation package. High reliability(Adoption of HVP process). 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Ratings 1500 900 5 100 300 2 150 --55 to +150 Unit V V V mA mA W °C °C 2.55 2.55ELECTRICAL CHARACTERISTICS
at Ta=25°C 2.4 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA Ratings min typ max 10 10 30 6 0.6 Unit µA µA MHz Continued on next page.