Sanyo Electric 2SC4734
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC4734 |
|---|---|
| Datasheet | 2SC4734 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Large current capacity (IC=2A).● High breakdown voltage (VCEO≥400V).
● Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA1830 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)300V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)100mA Output Capacitance Collector-to-Emitter Saturation Voltage Cob VCB=(–)30V, f=1MHz VCE(sat) IC=(–)500mA, IB=(–)50mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)500mA, IB...
