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2SC4919-S - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Ultrasmall-sized package permitting applied sets to be made small and slim.
  • Small output capacitance.
  • Low collector-to-emitter saturation voltage.
  • Low ON resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB.

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1086 2SC4919-S SANYO Semiconductors DATA SHEET 2SC4919-S NPN Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.