Sanyo Electric 2SC5443
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5443 |
|---|---|
| Datasheet | 2SC5443 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed (tf=100ns typ).● High breakdown voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.0 3.4 1.2 1 23 5.45 5.45 2.8 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Conditions Ratings 1500 800 6 20 40 3.5 180 150 –55 to +150 Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol Conditions ICES VCEO(sus) IEBO ICBO hFE1 hFE2 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=16A Ratings min typ max Unit 1.0 mA 800 V 1.0 mA 10 µA 20 30 47 Continued on next page.
