Sanyo Electric 2SC5932
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC5932 |
|---|---|
| Datasheet | 2SC5932 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2048B [2SC5932] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25°C Tj Tstg Conditions 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 5.45 5.45 Ratings 1600 800 5 20 40 3.5 140 150 --55 to +150 Unit V V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Collector-to-Emitter Breakdown Voltage Emitter Cutoff Current Symbol ICBO ICES V(BR)CEO IEBO Conditions VCB=800V, IE=0 VCE=1600V, RBE=0 IC=10mA, RBE=∞ VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA Continued on next page.
