Sanyo Electric 2SC5947
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2069C [2SC5947] 0.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP PC Tj Tstg PW≤300µs, Duty cycle≤10% Tc=25°C Conditions 2.55 2.55 2.7 Ratings 700 700 400 8 7 14 1.65 45 150 --55 to +150 1.4 Unit V V V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Conditions Ratings min typ max 10 10 Unit µA µA Continued on next page. Any and all SANYO products described or contained...