2SC5957M Datasheet PDF

FEATURES

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● NPN Triple Diffused Planar Silicon Transistor Switching Regulator

APPLICATIONS

High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 500 400 7 10 20 3.5 1.75 Tc=25°C 50 150 --55 to +150 Unit V V V A A A W W °C °C

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 Rank hFE M 20 to 40 Conditions VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=1.2A VCE=5V, IC=6A VCE=5V, IC=1mA Ratings min typ max 10 10 20* 10 10 40* Unit µA µA Continued on next page Any and all SANYO products described or contained...