Sanyo Electric 2SC6083A
NPN Triple Diffused Planar Silicon Transistor
FEATURES
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● NPN Triple Diffused Planar Silicon Transistor Switching Regulator
APPLICATIONS
High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 700 400 8 1 2 0.5 0.6 150 --55 to +150 Unit V V V A A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 hFE3 fT Cob Conditions VCB=350V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=5V, IC=1mA VCE=10V, IC=0.1A VCB=10V, f=1MHz 50 10 30 20 8 MHz pF Ratings min typ max 10 10 100 Unit µA µA Continued on next page. Any and all...