Sanyo Electric 2SC6099
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
● NPN Epitaxial Planar Silicon Transistor High-Voltage SwitchingAPPLICATIONS
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.FEATURES
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● Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 120 120 100 6.5 2 3 400 0.8 15 150 --55 to +150 Unit V V V V A A mA W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA 300 Ratings min typ max 1 1 600 Unit µA µA Continued on next page.