Sanyo Electric 2SD1062
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
APPLICATIONS
● Relay drivers, high-speed inverters, converters, and other general high-current switching applications.FEATURES
● Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.● Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A * : The 2SB826/2SD1062 are classified by 1A hFE as follows : 70 Q 140 100 R 200...