Sanyo Electric 2SD1236
PNP / NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
APPLICATIONS
● Large current switching of relay drivers, high-speed inverters, converters. Package Dimensions unit : mm 2010CFEATURES
● Low collector-to-emitter saturation voltage : VCE(sat)=--0.5V (PNP), 0.4V (NPN) max.● Large current capacity. [2SB920 / 2SD1236] 10.2 3.6 5.1 4.5 1.3 2.7 15.1 6.3 18.0 5.6 1.2 2.7 14.0 0.8 Specifications ( ) : 2SB920
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta=25°C Tc=25°C 123 2.55 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 min 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 Ratings (--)120 (--)80 (--)6 (--)5 (--)9 1.75 30 150 --55 to +150 Unit V V V A A W W °C °C Ratings typ max Unit (--)0.1 mA (--)0.1 mA Continued on next page.