Sanyo Electric 2SD1459
PNP/NPN Planar Silicon Transistors
APPLICATIONS
FEATURES
● High allowable collector dissipation (PC=2W).● Wide ASO. Package Dimensions unit:mm 2010C [2SB1037/2SD1459] ( ) : 2SB1037 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V Emitter Cutoff Current IEBO VEB=(–)5V DC Current Gain hFE VCE=(–)5V, IC=(–)0.3A Gain Bandwidth Product fT VCE=(–)5V, IC=(–)100mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)500mA, IB=(–)50mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)500mA, IB=(–)50mA * : The 2SB1037/2SD1459 are classified by 0.3A hFE as follows : 70 Q 140 100 R 200 JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)150 (–...