Sanyo Electric 2SD1651C
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SD1651C |
|---|---|
| Datasheet | 2SD1651C Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2174A [2SD1651C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 6 6 15 3.0 60 150 --55 to +150 Unit V V V A A W W °C °C 5.45ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCEO(sus) IEBO hFE1 h...
