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2SD1710 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed(tf=500ns max).
  • High breakdown voltage(VCBO=1500V).
  • High reliability(Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit : mm 2039D 3.4 16.0 [2SD1710] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 3.5 20.4 2.8 2.0 2.0 1.0 0.6 Specifications Absolute Maximum Ratings at Ta=25°C 123 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vo.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7315 2SD1710 NPN Triple Diffused Planar Silicon Transistor 2SD1710 Color TV Horizontal Deflection Output Applications Features • High speed(tf=500ns max). • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit : mm 2039D 3.4 16.0 [2SD1710] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 3.5 20.4 2.8 2.0 2.0 1.0 0.6 Specifications Absolute Maximum Ratings at Ta=25°C 123 5.45 5.