Sanyo Electric 2SD1902
PNP/NPN Triple Diffused Planar Type Silicon Transistors
APPLICATIONS
FEATURES
● Suitable for sets whose heighit is restricted.● Wide ASO (adoption of MBIT process).
● High reliability. Package Dimensions unit:mm 2049B [2SB1266/2SD1902] ( ) : 2SB1266 Specifications E : Emitter C : Collector B : Base SANYO : TO-220MF
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Ratings (–)60 (–)60 (–)6 (–)3 (–)8 1.65 30 150 –55 to +150 Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)0.5A VCE=(–)5V, IC=(–)3A VCE=(–)5V, IC=(–)0.5A VCB=(–)10V, f=1MHz (–)100 µA (–)100 µA...