Sanyo Electric 2SD1999
PNP / NPN Epitaxial Planar Transistors
| Part No. | 2SD1999 |
|---|---|
| Datasheet | 2SD1999 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP / NPN Epitaxial Planar Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Low saturation voltage.● Contains diode between collector and emitter.
● Contains bias resistance between base and emitter.
● Large current capacitance.
● Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit : mm 2038A [2SB1325 / 2SD1999] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SB1325 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC TJ TstgELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : 2SB1325 : BM 2SD1999 : DN Symbol ICBO hFE1 hFE2 fT Cob 0.4 0.5 3 1.5 2 1 3.0 (Bottom view) 0.75 Conditions Mounted on ceramic board (250mm2×0.8mm) 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Ratings (--)...
