Sanyo Electric 2SD2116
NPN Epitaxial Planar Silicon Transistor
FEATURES
● Darlington connection.● High DC current gain.
● Large current capacity, wide ASO. NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver
APPLICATIONS
Package Dimensions unit:mm 2064A [2SD2116] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.54 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=40V, IE=0 VEB=8V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=5V, IC=50mA VCB=10V, f=1MHz 1.0 0.6 0.5 23 2.54 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings 80 50 10 0.7 2 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ max Unit 100 nA 100 nA 5000 4000 200 MHz 9 pF Continued on next page.