Sanyo Electric 2SD2120
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
FEATURES
● Darlington connection (Contains bias resistance, damper diode).● High DC current gain.
● Less dependence of DC current gain on temperature. Package Dimensions unit:mm 2064A [2SD2120] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.54 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO VCB=60V, IE=0 VEB=5V, IC=0 VCE=3V, IC=500mA VCE=3V, IC=1A IC=1A, IB=2mA IC=1A, IB=2mA IC=100µA, IE=0 IC=10mA,...