Sanyo Electric 2SD2176
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SD2176 |
|---|---|
| Datasheet | 2SD2176 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Darlington connection.● On-chip Zener diode of 60±10V between collector and base.
● High inductive load handling capability.
● Small-sized package. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions On-chip Zener diode (60±10V) On-chip Zener diode (60±10V) Mounted on a ceramic board (250mm2✕0.8mm) Ratings 50 50 6 1.2 2.5 0.2 1.3 150 --55 to +150 Unit V V V A A A W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : DQ Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Conditions VCB=40V, IE=0A VEB=5V, IC=0A VCE=3V, IC=500mA IC=500mA, IB=1mA IC=500mA, IB=1mA min 1000 Ratings typ max Unit 10 μA 2 mA 20000 1.0 1.5 V 1.5 2 V Continued on next page.
