Sanyo Electric 2SD2199
PNP / NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Surface mount type device making the following possible. - Reduction in the number of manufacturing processes for 2SB1450/2SD2199-applied equipment. - High density surface mount applications. - Small size of 2SB1450/2SD2199-applied equipment.● Low collector-to-emitter saturation voltage.
● Highly resistant to breakdown because of wide ASO. Specifications ( ) : 2SB1450
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°CELECTRICAL CHARACTERISTICS
at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Ratings (--)60 (--)50 (--)6 (--)7 (--)12 1.65 40 150 --55 to +150 Unit V V V A A W W °C °C Ratings min typ max Unit (--)0.1 mA (--)0.1 mA Continued on next page.