Sanyo Electric 2SD2579
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SD2579 |
|---|---|
| Datasheet | 2SD2579 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed.● High breakdown voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SD2579] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 2.8 2.0 4.0 2.0 20.4 1.0 0.6 1 2 3 2.0 1:Base 2:Collector 3:Emitter SANYO:TO3PML 5.45 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions Ratings 1500 800 6 8 20 3.0 Unit V V V A A W W 3.5 5.45 Tc=25˚C Tj Tstg 60 150 –55 to +150 ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCB=800V, IE=0 800 1.0 Conditons Ratings min typ max 10 1.0 Unit µA mA V mA VCE=1500V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 Continued on next page.
