Sanyo Electric 2SD2649
NPN Triple Diffused Planar Silicon Transistor
APPLICATIONS
FEATURES
● High speed.● High breakdown voltage(VCBO=1500V).
● High reliability(Adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit : mm 2174A [2SD2649] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 12 3 5.45 3.5 1 : Base 2 : Collector 3 : Emitter Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C 5.45 SANYO : TO-3PMLH Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta=25°C Tc=25°C Conditions Ratings 1500 700 5 6 15 3.0 60 150 --55 to +150 Unit V V V A A W W °C °C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 min 700 Ratings typ max Unit 10 µA 1.0 mA V 1 mA Continued on next page.