Sanyo Electric 2SD2658LS
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SD2658LS |
|---|---|
| Datasheet | 2SD2658LS Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High speed.● High breakdown voltage (VCBO=1500V).
● High reliability (Adoption of HVP process).
● Adoption of MBIT process.
● On-chip damper diode. Package Dimensions unit : mm 2079D [2SD2658LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C 123 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj TstgELECTRICAL CHARACTERISTICS
at Ta=25°C Tc=25°C Conditions Ratings 1500 800 5 3.5 9 2.0 25 150 --55 to +150 Unit V V V A A W W °C °C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol Conditions ICBO ICES VCEO(sus) IEBO VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 min 800 40 Ratings typ max Unit 10 µA 1.0 mA V 130 mA Continued on next page.
