Sanyo Electric 2SD2688LS
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SD2688LS |
|---|---|
| Datasheet | 2SD2688LS Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Package Dimensions unit : mm 2079D [2SD2688LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 2.55 2.55 2.4 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Ratings 1500 800 5 10 25 2.0 35 150 --55 to +150 Unit V V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VBE=4V, IC=0 Ratings min typ max 10 1.0 800 40 130 Unit µA mA V mA 0.6 Continued on next page.
