Sanyo Electric 2SJ190
P-Channel MOSFET
| Part No. | 2SJ190 |
|---|---|
| Datasheet | 2SJ190 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● Low-voltage drive. P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching
APPLICATIONS
Package Dimensions unit:mm 2062A [2SJ190] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.8mm)ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=–1mA, VGS=0 VDS=–60V, VGS=0 VGS=±12V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–10V ID=–500...
