Sanyo Electric 2SJ339
P-Channel MOSFET
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● 4V drive.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ339] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions 2.4 Ratings –60 ±20 –25 –100 2 40 150 –55 to +150 Unit V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on...