Sanyo Electric 2SJ348
P-Channl Silicon MOSFET
2SJ348 Specifications
- Package : TO-220
- Drain-Source Resistance : 55mΩ
- Drain-Source Voltage : 60V
- Terminals : 3
- Max Power Dissipation : 70W
Source:
Octopart
| Part No. | 2SJ348 |
|---|---|
| Datasheet | 2SJ348 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channl Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● 4V drive. P-Channel Silicon MOSFET 2SJ348 Ultrahigh-Speed Switching
APPLICATIONS
Package Dimensions unit:mm 2052C [2SJ348] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C 2.55ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–15A ID=–15A, VGS=...
