2SJ456 Datasheet PDF

APPLICATIONS

FEATURES

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● Package Dimensions unit : mm 2128 [2SJ456] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 Low ON-resistance. High-speed diode incorporated. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 2.5 Ratings --250 ±30 --9 Unit V V A A W °C °C PW≤10µs, duty cycle≤1% Tc=25°C --36 50 150 --55 to +150

ELECTRICAL CHARACTERISTICS

at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-So...