Sanyo Electric 2SJ466
P-Channel MOSFET
| Part No. | 2SJ466 |
|---|---|
| Datasheet | 2SJ466 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Low ON resistance.● Ultrahigh-speed switching.
● 4V drive.
● Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2128 [2SJ466] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings 1 : Gate 2 : Source 3 : Drain SANYO : ZP Unit –30 ±20 –35 –140 50 150 V V A A W ˚C ˚C –55 to +150ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drai...
