2SJ659 - P-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

General-Purpose Switching Device.

2SJ659 p-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	2SJ659
Manufacturer	SANYO (now Panasonic)
File Size	57.45 KB
Description	P-Channel Silicon MOSFET
Datasheet	2SJ659 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.