Sanyo Electric 2SJ664
P-Channel MOSFET
| Part No. | 2SJ664 |
|---|---|
| Datasheet | 2SJ664 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions Ratings --100 ±20 --17 Unit V V A A W W °C °C mJ A PW≤10µs, duty cycle≤1% Tc=25°C --68 1.65 50 150 --55 to +150 38 --17 Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=30V, L=200µH, IAV=--17A *2 L≤200µH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=...
