Sanyo Electric 2SJ684
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
| Part No. | 2SJ684 |
|---|---|
| Datasheet | 2SJ684 Download |
| Manufacturer |  Sanyo Electric |
| Description | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| Buy | Stock & Price |
FEATURES
●●
● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --45 --180 50 150 --55 to +150 70 --45 Unit V V A A W °C °C mJ A Note : *1 VDD=--30V, L=50μH, IAV=--45A *2 L≤50μH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=-1mA, VGS=0V VDS=-100V, VGS=0V VGS= ±16V, VDS=0V Ratings min --100 --1 typ max Unit V Marking : J684 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd.
