Sanyo Electric 2SK1069
The 2SK1069 is classified by IDSS as follows (unit : mA) : 1.2 3 3.0 2.5 4 6.0 5.0 5 12.0 (Note) Marking : FJ IDSS rank : 3, 4, 5 • For CP package version, use the 2SK771.| Part No. | 2SK1069 |
|---|---|
| Datasheet | 2SK1069 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Junction Silicon FET |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Low-frequency general-purpose amplifiers.● Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits.
FEATURES
● Adoption of FBET process.● Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–20V, VDS=0 Zero-Gate Voltage Drain Current IDSS VDS=10V, VGS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1µA Forward Transfer Admittance | yfs | VDS=10V, VGS=0,...
