Sanyo Electric 2SK1417
the 2SK1417 because it has no protection diode between gate and source.FEATURES
● Low ON-state resistance.● Ultrahigh-speed switching.
● Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching
APPLICATIONS
Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°CELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=15A Static Drain-to-Source ON-State Resistance RDS(on) ID=15A, VGS=10V (Note) Be careful in handling 2.7 14.0 1 : Gate 0.4 2 :...