Sanyo Electric 2SK1439
the 2SK1439 because it has no protection diode between gate and source.2SK1439 Specifications
- Drain-Source Resistance : 2.6Ω
- Min Breakdown Voltage : 450V
- Terminals : 3
- Max Power Dissipation : 1.75W
- Power Dissipation : 50W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 2SK1439 |
|---|---|
| Datasheet | 2SK1439 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON-state resistance.● Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1439 Ultrahigh-Speed Switching
APPLICATIONS
Package Dimensions unit:mm 2052C [2SK1439] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°CELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A Static Drain-to-Source ON-State Resistance RDS(on) ID=1.5A, VGS=10V (Note) Be careful in handling 2.7 14.0 1 : Gate 0.4 2 : Drain 3 : S...
