Sanyo Electric 2SK2012
N-Channel Silicon MOSFET
APPLICATIONS
FEATURES
● Low ON-resistance.● Ultrahigh-speed switching.
● Low-voltage drive.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2012] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Ratings 250 ±30 18 72 2.0 40 150 –55 to +150 Unit V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Souce Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS V(BR)GSS IDSS IGSS VGS(of...