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2SK2442
N- Channel Silicon MOS FET
Very High-Speed Switching Applications
Features and Applications •Low ON-state resistance. •high-speed switching. •4V drive.
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain Current (Pulse) Allowable power Dissipation
Channel Temperature Storage Temperature
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage
TENTATIVE
VDSS VGSS ID IDP PD
Tch Tstg
PW≤10µS.