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2SK2532 - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • High-speed diode.
  • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Elec.

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Ordering number : EN5457 2SK2532 SANYO Semiconductors DATA SHEET 2SK2532 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • High-speed diode. • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.