2SK2617LS Datasheet PDF

FEATURES

● Low ON-resistance.
● Low Qg. 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching

APPLICATIONS

Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C 123 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg

ELECTRICAL CHARACTERISTICS

at Ta=25°C Tc=25˚C Conditions Ratings 500 ±30 4 16 2.0 25 150 --55 to +150 Unit V V A A W W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : K2617 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0 VDS=500V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A min 500 3.5 1.1 Ratings typ max Unit V 1.0 mA ±100 nA 5.5 V 2.2 S Continued on next page.