Sanyo Electric 2SK3702JS
N-Channel Silicon MOSFET
FEATURES
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● General-Purpose Switching Device
APPLICATIONS
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Pb-free type. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 18 72 2.0 20 150 --55 to +150 23 18 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=100µH, IAV=18A *2 L≤100µH, Single pulseELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VG...