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2SK4181 - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • Adoption of high reliability HVP process.
  • Avalanche resistance guarantee.
  • For use of lighting & etc.
  • High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0999 2SK4181 SANYO Semiconductors DATA SHEET 2SK4181 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee. • For use of lighting & etc. • High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*1) 525 V ±30 V 7.