Sanyo Electric 2SK4200LS
N-Channel Silicon MOSFET
FEATURES
●●
●
● N-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tc=25°C (SANYO’s ideal heat dissipation condition*3) PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*3) Conditions Ratings 650 ±30 4 3.7 16 2.0 30 150 --55 to +150 47 4 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silic...