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2SK4222 - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • High-speed switching.
  • 10V drive.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=99V, L=5mH, IAV=12A.

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Ordering number : ENA1519 2SK4222 SANYO Semiconductors DATA SHEET 2SK4222 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • High-speed switching. • 10V drive. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=99V, L=5mH, IAV=12A *2 L≤5mH, Single pulse Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit 600 V ±30 V 23 A 80 A 2.